1g X 8 Bit / 2g X 8 Bit Nand Flash Memory Semiconductor

Offered in 1G x 8bit, the K9K8G08U0M is a 8G-bit NAND Flash Memory with spare 256M-bit. Its NAND cell provides the most cost- effective solution for the solid state application market. A program operation CAN be performed in typical 200s on the (2K+64)Byte page and an erase operation CAN be performed in typical 1.5ms on a (128K+4K)Byte block. Data in the data Register CAN be read out at 25ns cycle time per Byte. The I/O pins serve as the ports for address and data input/output as well as command input. The on-chip write controller automates all program and erase functions including pulse repetition, where required, and internal verification and margining of data. Even the write-intensive systems CAN take advantage of the K9K8G08U0Ms extended reliability of 100K program/ erase cycles by providing ECC(Error Correcting Code) with real time mapping-out algorithm. The K9K8G08U0M is an optimum solu- tion for large nonvolatile storage applications such as solid state file storage and other portable applications requiring non-volatility. An ultra high density solution having two 8Gb stacked with two chip selects is also available in standard TSOPI package. By Samsung Semiconductor, Inc.
K9WAG08U1M 's PackagesK9WAG08U1M 's pdf datasheet

K9WAG08U1M Pinout, Pinouts
K9WAG08U1M pinout,Pin out
This is one package pinout of K9WAG08U1M,If you need more pinouts please download K9WAG08U1M's pdf datasheet.

K9WAG08U1M circuits will be updated soon..., now you can download the pdf datasheet to check the circuits!

Related Electronics Part Number

Related Keywords:

K9WAG08U1M Pb-Free K9WAG08U1M Cross Reference K9WAG08U1M Schematic K9WAG08U1M Distributor
K9WAG08U1M Application Notes K9WAG08U1M RoHS K9WAG08U1M Circuits K9WAG08U1M footprint
Hot categories