8M X 8 Bit NAND Flash Memory

The KM29U64000 is a 8M(8,388,608)x8bit NAND Flash Mem- ory KM29U64000T, KM29U64000IT with a spare 256K(262,144)x8bit. Its NAND cell provides the most cost-effective solution for the solid state mass storage market. A program operation programs the 528-byte page in typically 200ms and an erase operation CAN be performed in typ- ically 2ms on an 8K-byte block. Data in the page CAN be read out at 50ns cycle time per byte. The I/O pins serve as the ports for address and data input/output as well as command inputs. The on-chip write controller automates all program and erase functions including pulse repetition, where required, and inter- nal verify and margining of data. Even the write-intensive sys- tems CAN take advantage of the KM29U64000s extended reliability of 1,000,000 program/erase cycles by providing either ECC(Error Correcting Code) or real time mapping-out algo- rithm. These algorithms have been implemented in many mass storage applications and also the spare 16 bytes of a page combined with the other 512 bytes CAN be utilized by system- level ECC. The KM29U64000 is an optimum solution for large nonvolatile storage applications such as solid state file storage, digital voice recorder, digital still camera and other portable applica- tions requiring non-volatility. By Samsung Semiconductor, Inc.
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KM29U64000IT Pinout, Pinouts
KM29U64000IT pinout,Pin out
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