2m X 16bit X 4 Banks Synchronous Dram Semiconductor

The KM416S8030 is 134,217,728 bits synchronous high data rate Dynamic RAM organized as 4 x 2,097,152 words by 16 bits, fabricated with SAMSUNGs high performance CMOS technology. Synchronous design allows precise cycle control with the use of system Clock I/O transactions are possible on every clcok cycle. Range of operating frequencies, programma- ble burst length and programmable latencies allow the same device to be useful for a variety of high bandwidth, high perfor- mance memory system applications. By Samsung Semiconductor, Inc.
KM416S8030 's PackagesKM416S8030 's pdf datasheet



KM416S8030 Pinout, Pinouts
KM416S8030 pinout,Pin out
This is one package pinout of KM416S8030,If you need more pinouts please download KM416S8030's pdf datasheet.

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