4m X 16bit Cmos Dynamic Ram With Extended Data Out Semiconductor

This is a family of 4,194,304 x 16 bit Extended Data Out Mode CMOS DRAMs KM416V4004B KM416V4104B . Extended Data Out Mode offers high speed random access of memory cells within the same row. Refresh cycle(4K Ref. or 8K Ref.), access time (-45, -5 or -6), power consumption(Normal or Low power) are optional features of this family. All of this family have CAS-before-RAS refresh, RAS-only refresh and Hidden refresh capabilities. Furthermore, Self-refresh operation is available in L-version. This 4Mx16 EDO Mode DRAM family is fabricated using Sam- sungs advanced CMOS process to realize high band-width, low power consumption and high reliability. By Samsung Semiconductor, Inc.
KM416V4004B 's PackagesKM416V4004B 's pdf datasheet
KM416V4104B




KM416V4004B Pinout, Pinouts
KM416V4004B pinout,Pin out
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