1m X 1bit High-speed Cmos Sram Semiconductor

The KM611001 L is a 1,048,576-bit high-speed Static Random Access Memory organized as 1,048,576 words by 1 bit. The KM611001 L has separate input and output lines for fast read and write access. The device is fabricated using Samsung`s advanced CMOS process and designed for high-speed circuit technology. It is particularly well suited for use in high- density high-speed system applications. The KM611001 L is packaged in a 400 mil 28-pin plastic DIP or SOJ. By Samsung Semiconductor, Inc.
KM611001 's PackagesKM611001 's pdf datasheet



KM611001 Pinout, Pinouts
KM611001 pinout,Pin out
This is one package pinout of KM611001,If you need more pinouts please download KM611001's pdf datasheet.

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