64k (8192-word 8-bit) Sram With Oe, Ce1, And Ce2 Control PinsThe LC3564B LC3564BS LC3564BM and LC3564BT
are 8192-word 8-bit asynchronous silicon Gate CMOS
SRAMs These are full CMOS type SRAMs that adopt a
six-transistor memory cell and feature fast access times,
low operating power dissipation, and an ultralow standby
current. These SRAMs provide three control signal inputs:
an OE input for high-speed memory access, and two chip
enable lines, CE1 and CE2, for low power mode and
device selection. These means that these SRAMs area
ideal for systems that require low power and battery
backup, and that they support easy memory expansion.
The ultralow standby current that is a feature of these
SRAMs allows them to be used with capacitor backup as
well. Since these SRAMs support 3-V operation, they are
also appropriate for use in portable battery operated
systems. By Sanyo Semiconductor Corporation
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