64k (8192 Words X 8 Bits) SramThe LC3564RM RT are 8192-word 8bit, asynchronous,
silicon Gate low-voltage CMOS SRAM LSIs.They oper-
ate from a 2.0 to 3.6V supply, making them ideal for hand-
held, battery-operated equipment.
They are fully CMOS devices employing 2-layer A1 wir-
ing to realize high-speed access, low operating current
consumption and very low standby current. They incorpo-
rate control signal inputs; OE for high-speed memory
access, and 2 chip enables CE1 and CE2 for power-down
and device selection.
They are ideal for systems requiring high speed, low
power and battry backup or for easy mamory expansion.
The very low standby current means that backup CAN also
be achieved using a capacitor. By Sanyo Semiconductor Corporation
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LC3564RM Pb-Free | LC3564RM Cross Reference | LC3564RM Schematic | LC3564RM Distributor |
LC3564RM Application Notes | LC3564RM RoHS | LC3564RM Circuits | LC3564RM footprint |