Asynchronous Silicon Gate 1m (131,072 Words X 8 Bits) Sram

The LC35V1000BM and LC35V1000BTS-70U are asynchronous silicon Gate CMOS static RAM devices with a 131,072-word by 8-bit structure. They provide two chip enable pins (CE1 and CE2) for device select/deselect control and one output enable pin (OE) for output control. They feature high speed, low power, and a wide operating temperature range.This makes them optimal for use in systems that require high speed, low power, and battery backup. They also support easy memory expansion. By Sanyo Semiconductor Corporation
LC35V1000BM 's PackagesLC35V1000BM 's pdf datasheet

LC35V1000BM Pinout, Pinouts
LC35V1000BM pinout,Pin out
This is one package pinout of LC35V1000BM,If you need more pinouts please download LC35V1000BM's pdf datasheet.

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