256k (32k Words X 8 Bits) Sram Control Pins: Oe And CeThe LC35W256EM-10W and LC35W256ET-10W are
asynchronous silicon-gate CMOS SRAMs with a 32768-
word by 8-bit structure. These are full-CMOS devices
with 6 Transistors per memory cell, and feature ultralow-
voltage operation, a low operating current drain, and an
ultralow standby current. Control inputs include OE for
fast memory access and CE for power saving and device
selection. This makes these devices optimal for systems
that require low power or battery backup, and makes
memory expansion easy. The ultralow standby current
allows these devices to be used with capacitor backup as
well. By Sanyo Semiconductor Corporation
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LC35W256EM Pb-Free | LC35W256EM Cross Reference | LC35W256EM Schematic | LC35W256EM Distributor |
LC35W256EM Application Notes | LC35W256EM RoHS | LC35W256EM Circuits | LC35W256EM footprint |