256k (32k Words X 8 Bits) Sram Control Pins: Oe And Ce

The LC35W256EM-10W and LC35W256ET-10W are asynchronous silicon-gate CMOS SRAMs with a 32768- word by 8-bit structure. These are full-CMOS devices with 6 Transistors per memory cell, and feature ultralow- voltage operation, a low operating current drain, and an ultralow standby current. Control inputs include OE for fast memory access and CE for power saving and device selection. This makes these devices optimal for systems that require low power or battery backup, and makes memory expansion easy. The ultralow standby current allows these devices to be used with capacitor backup as well. By Sanyo Semiconductor Corporation