• Product pinout
  • Description
  • BLC6G20-75,BLC6G20-75; BLC6G20LS-75 UHF Power LDMOS Transistor
  • BLC6G20-75; BLC6G20LS-75 UHF power LDMOS transistor,75 W LDMOS power transistor for base station applications at frequencies from 1800 MHz to 2000 MHz. CAUTION This device is sensitive to ElectroStatic Discharge (ESD). Therefore care should be taken during ...
  • BLF4G22-130,BLF4G22-130 UHF Power LDMOS Transistor
  • BLF4G22-130 UHF power LDMOS transistor,130 W LDMOS power transistor for base station applications at frequencies from 2000 MHz to 2200 MHz. CAUTION This device is sensitive to ElectroStatic Discharge (ESD). Therefore care should be taken during transport ...
  • PD20015-E,RF Power Transistor - LdmoST Family
  • The PD20015-E is a common source N-channel, enhancement-mode lateral field-effect RF power transistor. It is designed for high gain, broadband commercial and industrial applications. It operates at 13.6 V in common source mode at frequencies of up to ...
  • PD54003L-E,RF Power Transistors The LdmoST Plastic FAMILY
  • The PD54003L-E is a common source N-Channel, enhancement-mode lateral Field- Effect RF power transistor. It is designed for high gain, broad band commercial and industrial applications. It operates at 7 V in common source mode at frequencies of up to 1 ...
  • AGR18060E,60 W, 1805 MHz—1880 MHz, LDMOS RF Power Transistor
  • The AGR18060E is a 60 W, 26 V N-channel laterally diffused metal oxide semiconductor (LDMOS) RF power field effect transistor (FET) suitable for enhanced data for global evolution (EDGE), global system for mobile communication (GSM), and single- carrier ...
  • SLD-1083CZ,4 Watt Discrete LDMOS FET In Ceramic Package
  • The SLD-1026Z is a robust 3 Watt high performance LDMOS transistor. It is designed for operation from 10-2700 MHz. It is an excellent solution for applications requiring high linearity and efficiency at low cost. The SLD-1026Z is typically used as a driver for ...
  • NE5520379A,MEDIUM POWER SILICON LD-MOSFET
  • NEC\'s NE5520379A is an N-Channel silicon power MOSFET specially designed as the transmission power amplier for 3.2 V GSM900 handsets. Die are manufactured using NEC\'s NEWMOS technology (NEC\'s 0.6 m WSi gate lateral MOS- FET) and housed in a ...
  • MHPA21010N,UMTS Band RF Linear LDMOS Amplifier
  • Designed for Class AB amplifier applications in 50 ohm systems operating in the UMTS frequency band. A silicon FET design provides outstanding linearity and gain. In addition, the excellent group delay and phase linearity characteris- tics are ideal for ...