8 Megabit Flashbank Memory Le28dw8102t

The LE28DW8102T consists of two memory banks, 2 each 256K x 16 bits sector mode Flash EEPROM manufactured with SANYO's proprietary, high performance FlashTechnology. The LE28DW8102T writes with a 3.0-volt-only power supply. The LE28DW8102T is divided into two separate memory banks, 2 each 512K x 16 Flash banks. Each Flash bank is typically used for program code storage and contains 256 sectors, each of 1K words or 8 blocks, each of 32K words. The Flash banks may also be used to store data. Any bank may be used for executing code while writing data to a different bank. Each memory bank is controlled by separate Bank selection address (A18) lines. The LE28DW8102T inherently uses less energy during Erase, and Program than alternative Flash technologies. The total energy consumed is a function of the applied voltage, current, and time of application. Since for any given voltage range, the Flash technology uses less current to program and has a shorter Erase time, the total energy consumed during any Erase or Program operation is less than alternative Flash technolo- gies. The Auto Low Power mode automatically reduces the active read current to approximately the same as standby; thus, providing an average read current of approximately 1 mA/MHz of Read cycle time. By Sanyo Semiconductor Corporation
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LE28DW8102T Pinout, Pinouts
LE28DW8102T pinout,Pin out
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