1M(65536words×16bits) Flash EEPROM

The LE28F1101T is a 64K 16 CMOS sector erase, word program EEPROM The LE28F1101T is manufactured using SANYO's proprietary, high performance CMOS Flash EEPROM technology. Breakthroughs in EEPROM cell design and process architecture attain better reliability and manufacturability compared with conventional approaches. The LE28F1101T erases and programs with a 5-volt only power supply. LE28F1101T is offered in TSOP40 (1014mm) packages. Featuring high performance programming, LE28F1101 typically word programs in 30s. The LE28F1101typically sector (128word) erases in 2ms. Both program and erase times CAN be optimized using Interface feature such as Toggle bit or DATA Polling to indicate the completion of the write cycle. To protect against an inadvertent write, the LE28F1101T has on chip hardware and software data protec- tion schemes. Designed, manufactured, and tested for a wide spectrum of applications, the LE28F1101T is offered with a guaranteed sector write endurance of 104 cycles. Data reten- tion is rated greater than 10 years. The LE28F1101T is best suited for applications that re- quire reprogrammable nonvolatile mass storage of program or data memory. For all system applications, the LE28F1101T significantly improves performance and reli- ability, while lowering power consumption when compared with floppy diskettes or EPROM approaches. EEPROM technology makes possible convenient and economical up- dating of codes and control programs on-line. The LE28F1101T improves flexibility, while lowering the cost, of program and configuration storage applications. Figure 1 shows the pin assignments for the 40 lead Plastic TSOP packages. Figure 2 shows the functional block diagram of the LE28F1101T. Pin description and operation modes CAN be found in Tables 1 through 3. By Sanyo Semiconductor Corporation
LE28F1101T-40 's PackagesLE28F1101T-40 's pdf datasheet



LE28F1101T-40 Pinout, Pinouts
LE28F1101T-40 pinout,Pin out
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