Rf Power Transistors Ldmos Enhanced Technology In Plastic Package

The LET20015 is a common source N-Channel, enhancement-mode lateral Field-Effect RF Power Transistor It is designed for high gain, broad band commercial and industrial applications. It operates at 26 V in common source mode at frequencies up to 2 GHz. LET20015 boasts the excellent gain, linearity and reliability of STs latest LDMOS technology mounted in the first true SMD plastic RF power package, PowerSO-10RF. LET20015s superior linearity performance makes it an ideal solution for base station applications. The PowerSO-10 plastic package, designed to offer high reliability, is the first ST JEDEC approved, high power SMD package. It has been specially optimized for RF needs and offers excellent RF performances and ease of assembly. By STMicroelectronics
LET20015 's PackagesLET20015 's pdf datasheet

LET20015 Pinout, Pinouts
LET20015 pinout,Pin out
This is one package pinout of LET20015,If you need more pinouts please download LET20015's pdf datasheet.

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