Rf Power Transistors Ldmos Enhanced Technology

The LET20030C is a common source N-Channel enhancement-mode lateral Field-Effect RF Power Transistor designed for Broadband commercial and industrial applications at frequencies up to 2.0 GHz. The LET20030C is designed for high gain and Broadband performance operating in common source mode at 26 V. It is ideal for base station applications requiring high linearity. By STMicroelectronics
LET20030C 's PackagesLET20030C 's pdf datasheet



LET20030C Pinout, Pinouts
LET20030C pinout,Pin out
This is one package pinout of LET20030C,If you need more pinouts please download LET20030C's pdf datasheet.

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