Rf Power Transistors Ldmos Enhanced Technology

The LET20030C is a common source N-Channel enhancement-mode lateral Field-Effect RF Power Transistor designed for Broadband commercial and industrial applications at frequencies up to 2.0 GHz. The LET20030C is designed for high gain and Broadband performance operating in common source mode at 26 V. It is ideal for base station applications requiring high linearity. By STMicroelectronics
LET20030C 's PackagesLET20030C 's pdf datasheet

LET20030C Pinout, Pinouts
LET20030C pinout,Pin out
This is one package pinout of LET20030C,If you need more pinouts please download LET20030C's pdf datasheet.

LET20030C circuits will be updated soon..., now you can download the pdf datasheet to check the circuits!

Related Electronics Part Number

Related Keywords:

LET20030C Pb-Free LET20030C Cross Reference LET20030C Schematic LET20030C Distributor
LET20030C Application Notes LET20030C RoHS LET20030C Circuits LET20030C footprint