Rf Power Transistors Ldmos Enhanced Technology

The LET8180 is a common source N-Channel enhancement-mode lateral Field-Effect RF Power Transistor designed for Broadband commercial and industrial applications at frequencies up to 1.0 GHz. The LET8180 is designed for high gain and Broadband performance operating in common source mode at 32 V. Its internal matching makes it ideal for base station applications requiring high linearity. By STMicroelectronics
LET8180 's PackagesLET8180 's pdf datasheet

LET8180 Pinout, Pinouts
LET8180 pinout,Pin out
This is one package pinout of LET8180,If you need more pinouts please download LET8180's pdf datasheet.

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