Advanced HEXFET Power MOSFETs from International Rectifier IRF1010E utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. By LTO-DMS Semiconductors
IRF1010E 's PackagesIRF1010E 's pdf datasheet

IRF1010E Pinout, Pinouts
IRF1010E pinout,Pin out
This is one package pinout of IRF1010E,If you need more pinouts please download IRF1010E's pdf datasheet.

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