Fifth Generation HEXFETs IRF520N from International Rectifier Utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. . By LTO-DMS Semiconductors
IRF520N 's PackagesIRF520N 's pdf datasheet

IRF520N Pinout, Pinouts
IRF520N pinout,Pin out
This is one package pinout of IRF520N,If you need more pinouts please download IRF520N's pdf datasheet.

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