HEXFET® Power MOSFET Third Generation HEXFETs IRF630 from International Rectifier provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. By LTO-DMS Semiconductors

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IRF630 circuits will be updated soon..., now you can download the pdf datasheet to check the circuits!

• IRF620, HEXFET® Power MOSFET
• IRF610, HEXFET® Power MOSFET
• IRF640, N-channel 200V - 0.15Ω - 18A TO-220/TO-220FP Mesh Overlay™ Power MOSFET
• IRF9630, 6.5a, 200v, 0.800 Ohm, P-channel Power Mosfets Corporation
• IRF820, N-channel 500V - 2.5Ω - 4A TO-220 PowerMesh™II MOSFET
• JANSR2N7410, 3.5a, 100v, 0.600 Ohm, Rad Hard, N-channel Power Mosfet Corporation
• FQPF2N60, 600V N-Channel MOSFET
• STP3NA50, N - Channel Enhancement Mode Fast Power Mos Transistor
• HUFA75842P3, 43A, 150V, 0.042 Ohm, N-Channel, UltraFET Power MOSFET
• FS30ASH-06, High-speed Switching Use Electric Semiconductor
• SSP5N60A, Advanced Power MOSFET
• BUK111-50GL, Logic Level Topfet Smd Version Of Buk112-50gl - Nxp Semiconductors
• MMFT3055E, Medium Power Tmos Fet 1.7 Amp 60 Volts , Inc

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