Ingap Hbt 2.3 - 2.5 Ghz Power Amplifier Corporation

The Microsemi LX5511 is a power Amplifier that is optimized for WLAN applications in the 2.3GHz 2.5GHz frequency range. The LX5511 Power Amplifier is implemented as a two- stage monolithic Microwave integrated circuit (MMIC) with active bias and output pre-matching. The device is manufactured with an InGaP/GaAs Heterojunction Bipolar Transistor (HBT) IC process (MOCVD). With a single low voltage supply of 3.3V 26dB power gain between 2.3-2.5GHz, at a low quiescent current of 90mA. For 20dBm OFDM output power (64QAM, 54Mbps), the PA provides a low EVM (Error-Vector Magnitude) of less than 3.0%, and consumes 170mA total DC current.. The LX5511 is available in a 16-pin 3mmx3mm micro-lead quad package (MLPQ). The compact footprint, low profile, and thermal capability of the MLPQ package makes the LX5511 an ideal solution for medium-gain power Amplifier requirements for IEEE 802.11b/g applications By Microsemi Corporation
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LX5511 Pinout will be updated soon..., now you can download the pdf datasheet to check the pinouts !
LX5511 circuits will be updated soon..., now you can download the pdf datasheet to check the circuits!

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