Low Noise Amplifier (lna) For 2.3 - 2.5 Ghz Applications Using The Sige Bfp640 Transistor

• 2.3 GHz SDARS, 2.4 GHz (Bluetooth, WiLAN, other 2.4 GHz ISM band applications) Overview • Design Goals: Gain = 15 dB, Noise Figure < 1.2 dB, Input / Output Return Loss 10 dB or better, current < 7 mA from a 3.0 Volt power supply, Output P1dB > -15 dBm min. • Printed Circuit Board used is Infineon Part Number 640-061603 Rev A. Standard FR4 material is used in a three-layer PCB. Please refer to cross-sectional diagram. • Low-cost, standard "0402" case-size SMT passive components are used throughout. Please refer to schematic and Bill Of Material. The LNA is unconditionally stable from 5 MHz to 6 GHz. • Total PCB area used for the single LNA stage is approximately 35 mm². Total Parts count, including the BFP640 Transistor is 12. • Achieved 15 dB gain, 0.96 dB Noise Figure at 2400 MHz from a 3.0 V supply, drawing 6.7 mA. Note noise figure result does NOT "back out" FR4 PCB losses - if the PCB loss at LNA input were extracted, Noise Figure result would be approximately 0.2 dB lower. Amplifier is unconditionally stable from 5 MHz to 6 GHz. Input P1dB ≈ -13.1 dBm @ 2400 MHz. Outstanding Input Third Order Intercept of +11.6 dBm.
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Low Noise Amplifier (lna) For 2.3 - 2.5 Ghz Applications Using The Sige Bfp640 Transistor application circuits
Low Noise Amplifier (lna) For 2.3 - 2.5 Ghz 
Applications Using The Sige Bfp640 Transistor application circuits



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