128 Mbit (8 Mb X 16, Multiple Bank, Page, Dual Boot) 3 V Supply Flash Memory

The M29DW128G is a 128 Mbit (8 Mb x 16) non-volatile memory that CAN be read, erased and reprogrammed. These operations CAN be performed using a single low voltage (2.7 to 3.6 V) supply. At power-up the memory defaults to its read mode. The M29DW128G features an asymmetrical block architecture, with 8 parameter and 62 main blocks, divided into four banks, A, B, C and D, providing multiple bank operations. While programming or erasing in one bank, read operations are possible in any other bank. The bank architecture is summarized in Table 2. Four of the parameter blocks are at the top of the memory address space, and four are at the bottom. By STMicroelectronics
M29DW128G 's PackagesM29DW128G 's pdf datasheet
M29DW128G60ZA6E
M29DW128G70NF6E




M29DW128G Pinout, Pinouts
M29DW128G pinout,Pin out
This is one package pinout of M29DW128G,If you need more pinouts please download M29DW128G's pdf datasheet.

M29DW128G Application circuits
M29DW128G circuits
This is one application circuit of M29DW128G,If you need more circuits,please download M29DW128G's pdf datasheet.


Related Electronics Part Number

Related Keywords:

M29DW128G Pb-Free M29DW128G Cross Reference M29DW128G Schematic M29DW128G Distributor
M29DW128G Application Notes M29DW128G RoHS M29DW128G Circuits M29DW128G footprint
Hot categories