256m Double Data Rate Synchronous Dram Electric Semiconductor

M2S56D20AKT is a 4-bank x 16,777,216-word x 4-bit, M2S56D30AKT is a 4-bank x 8,388,608-word x 8-bit, M2S56D40AKT is a 4-bank x 4,194,304-word x 16-bit, double data rate synchronous DRAM with SSTL_2 Interface All control and address signals are referenced to the rising edge of CLK. Input data is registered on both edges of data strobe, and output data and data strobe are referenced on both edges of CLK. The M2S56D20/30/40AKT achieves very high speed data rate up to 133MHz, and are suitable for main memory in computer systems. By Mitsumi Electronics, Corp.
M2S56D20AKT 's PackagesM2S56D20AKT 's pdf datasheet

M2S56D20AKT Pinout, Pinouts
M2S56D20AKT pinout,Pin out
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