Pc100 Unbuffered Dimm Semiconductor

The Samsung M366S1623DT0 is a 16M bit x 64 Synchronous Dynamic RAM high density memory module. The Samsung M366S1623DT0 consists of sixteen CMOS 8M x 8 bit with 4banks Synchronous DRAMs in TSOP-II 400mil package and a 2K EEPROM in 8-pin TSSOP package on a 168-pin glass-epoxy substrate. Two 0.1uF decoupling capacitors are mounted on the printed circuit board in parallel for each SDRAM The M366S1623DT0 is a Dual In-line Memory Module and is intended for mounting into 168-pin edge connector sockets. Synchronous design allows precise cycle control with the use of system Clock I/O transactions are possible on every Clock cycle. Range of operating frequencies, programmable latencies allows the same device to be useful for a variety of high bandwidth, high performance memory system applications. By Samsung Semiconductor, Inc.