Pc100 Unbuffered Dimm SemiconductorThe Samsung M366S1623DT0 is a 16M bit x 64 Synchronous
Dynamic RAM high density memory module. The Samsung
M366S1623DT0 consists of sixteen CMOS 8M x 8 bit with 4banks
Synchronous DRAMs in TSOP-II 400mil package and a 2K
EEPROM in 8-pin TSSOP package on a 168-pin glass-epoxy
substrate. Two 0.1uF decoupling capacitors are mounted on the
printed circuit board in parallel for each SDRAM
The M366S1623DT0 is a Dual In-line Memory Module and is
intended for mounting into 168-pin edge connector sockets.
Synchronous design allows precise cycle control with the use of
system Clock I/O transactions are possible on every Clock cycle.
Range of operating frequencies, programmable latencies allows
the same device to be useful for a variety of high bandwidth, high
performance memory system applications. By Samsung Semiconductor, Inc.
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M366S1623DT0 Pb-Free | M366S1623DT0 Cross Reference | M366S1623DT0 Schematic | M366S1623DT0 Distributor |
M366S1623DT0 Application Notes | M366S1623DT0 RoHS | M366S1623DT0 Circuits | M366S1623DT0 footprint |