128mb Ddr Sdram Module(16mx64 Based On 8mx16 Ddr Sdram)

The Samsung M470L1714BT0 is 16M bit x 64 Double Data Rate SDRAM high density memory modules based on first gen of 128Mb DDR SDRAM respectively. The Samsung M470L1714BT0 consists of eight CMOS 8M x 16 bit with 4banks Double Data Rate SDRAMs in 66pin TSOP- II(400mil) packages mounted on a 200pin glass-epoxy sub- strate. Four 0.1uF decoupling capacitors are mounted on the printed circuit board in parallel for each DDR SDRAM The M470L1714BT0 is Dual In-line Memory Modules and intended for mounting into 200pin edge connector sockets. Synchronous design allows precise cycle control with the use of system Clock Data I/O transactions are possible on both edges of DQS. Range of operating frequencies, programmable latencies and burst lengths allow the same device to be useful for a variety of high bandwidth, high performance memory sys- tem applications. By Samsung Semiconductor, Inc.
M470L1714BT0 's PackagesM470L1714BT0 's pdf datasheet



M470L1714BT0 Pinout will be updated soon..., now you can download the pdf datasheet to check the pinouts !
M470L1714BT0 circuits will be updated soon..., now you can download the pdf datasheet to check the circuits!

Related Electronics Part Number

Related Keywords:

M470L1714BT0 Pb-Free M470L1714BT0 Cross Reference M470L1714BT0 Schematic M470L1714BT0 Distributor
M470L1714BT0 Application Notes M470L1714BT0 RoHS M470L1714BT0 Circuits M470L1714BT0 footprint
Hot categories