16 Mbit (512 Kb X 32, Boot Block, Burst) 3 V Supply Flash Memories

The M58BW016DT M58BW016DB M58BW016FT and M58BW016FB are 16 Mbit non- volatile Flash Memories that CAN be erased electrically at the block level and programmed in-system on a double-word basis using a 2.7 V to 3.6 V V supply for the circuit and a DD V supply down to 2.4 V for the input and output Buffers Optionally a 12 V V supply DDQ PP CAN be used to provide fast program and erase for a limited time and number of program/erase cycles. The devices support Asynchronous (Latch Controlled and Page Read) and Synchronous Bus operations. The Synchronous Burst Read Interface allows a high data transfer rate controlled by the Burst Clock K, signal. It is capable of bursting fixed or unlimited lengths of data. The burst type, latency and length CAN be configured and CAN be easily adapted to a large variety of system Clock frequencies and Microprocessors All writes are asynchronous. On power-up the memory defaults to Read mode with an Asynchronous Bus. By STMicroelectronics
M58BW016DB 's PackagesM58BW016DB 's pdf datasheet

M58BW016DB Pinout, Pinouts
M58BW016DB pinout,Pin out
This is one package pinout of M58BW016DB,If you need more pinouts please download M58BW016DB's pdf datasheet.

M58BW016DB Application circuits
M58BW016DB circuits
This is one application circuit of M58BW016DB,If you need more circuits,please download M58BW016DB's pdf datasheet.

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