32 Mbit (1mb X32, Boot Block, Burst) 3.3v Supply Flash Memory

SUMMARY DESCRIPTION The M58BW032B M58BW032D is a 32Mbit non-volatile Flash memory that CAN be erased electrically at the block level and programmed in-system on a Double- Word basis using a 3.0V to 3.6V VDD supply for the circuit and a VDDQ supply down to 1.6V for the In- put and Output Buffers The devices support Asynchronous (Latch Con- trolled and Page Read) and Synchronous Bus op- erations. The Synchronous Burst Read Interface allows a high data transfer rate controlled by the Burst Clock K, signal. It is capable of bursting fixed or unlimited lengths of data. The burst type, latency and length are configurable and CAN be easily adapted to a large variety of system Clock frequencies and Microprocessors All Writes are Asynchronous. On power-up the memory defaults to Read mode with an Asynchronous Bus. The device features an asymmetrical block archi- tecture. The M58BW032B D has an array of 62 main blocks of 512 Kbits each, plus 4 large param- eter blocks of 128Kbits each and 8 small parame- ter blocks of 64 Kbits each. The large and small parameter blocks are located either at the top M58BW032BT M58BW032DT or at the bottom M58BW032BB M58BW032DB of the address space. The first large parameter block is referred to as Boot Block and CAN be used either to store a boot code or parameters. The memory array orga- nization is detailed in Tables 2, Top Boot Block Ad- dresses and 3, Bottom Boot Block Addresses. By STMicroelectronics
M58BW032BB 's PackagesM58BW032BB 's pdf datasheet
M58BW032BT
M58BW032DT
M58BW032DB
M58BW032B
M58BW032D




M58BW032BB Pinout, Pinouts
M58BW032BB pinout,Pin out
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