128 Mbit (8Mb X16, Multiple Bank, Multi-Level, Burst) 1.8V Supply Flash Memory

The M58LR128GT, M58LR128GB is a 128 Mbit (8 Mbit x16) non-volatile Flash memory that may be erased electrically at block level and programmed in-sys- tem on a Word-by-Word basis using a 1.7V to 2.0V VDD supply for the circuitry and a 1.7V to 2.0V VDDQ supply for the Input/Output pins. An optional 9V VPP power supply is provided to speed up fac- tory programming. The device features an asymmetrical block archi- tecture and is based on a multi-level cell technolo- gy. M58LR128GT, M58LR128GB has an array of 131 blocks, and is divided into 8 Mbit banks. There are 15 banks each containing 8 main blocks of 64 KWords, and one parameter bank containing 4 pa- rameter blocks of 16 KWords and 7 main blocks of 64 KWords. By STMicroelectronics
M58LR128GB 's PackagesM58LR128GB 's pdf datasheet
M58LR128GB85ZB5
M58LR128GB85ZB5E
M58LR128GB85ZB5F




M58LR128GB Pinout, Pinouts
M58LR128GB pinout,Pin out
This is one package pinout of M58LR128GB,If you need more pinouts please download M58LR128GB's pdf datasheet.

M58LR128GB Application circuits
M58LR128GB circuits
This is one application circuit of M58LR128GB,If you need more circuits,please download M58LR128GB's pdf datasheet.


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