128 Mbit (8mb X16, Multiple Bank, Multi-level, Burst) 1.8v Supply Flash MemoryThe M58MR016 is a 16 Mbit non-volatile Flash
memory that may be erased electrically at block
level and programmed in-system on a Word-by-
Word basis using a 1.7V to 2.0V VDD supply for the
circuitry. For Program and Erase operations the
necessary high voltages are generated internally.
The device supports synchronous burst read and
asynchronous read from all the blocks of the mem-
ory array; at power-up the device is configured for
page mode read. In synchronous burst mode, a
new data is output at each Clock cycle for frequen-
cies up to 40MHz. By STMicroelectronics
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| M58MR016C Pb-Free | M58MR016C Cross Reference | M58MR016C Schematic | M58MR016C Distributor |
| M58MR016C Application Notes | M58MR016C RoHS | M58MR016C Circuits | M58MR016C footprint |
