256 Mbit Or 512 Mbit (x16, Multiple Bank, Multilevel, Burst) 1.8 V Supply Flash Memories

The M58PR256J and M58PR512J are 256 Mbit (16 Mbit 16) and 512 Mbit (32 Mbit 16) non-volatile Flash Memories respectively. They are referred to as M58PRxxxJ in the rest of the document unless otherwise specified. The M58PRxxxJ may be erased electrically at Block level and programmed in-system on a Word-by-Word basis using a 1.7 V to 2.0 V VDD supply for the circuitry and a 1.7 V to 2.0 V VDDQ supply for the Input/Output pins. An optional 9 V VPP power supply is provided to speed up factory programming. The M58PRxxxJ has a uniform Block architecture and is based on a Multi-Level cell technology. The M58PR256J has an array of 128 Blocks, and is divided into 32 Mbit banks. There are 8 banks each containing 16 Blocks of 128 KWords. The M58PR512J has an array of 256 Blocks, and is divided into 64 Mbit banks. There are 8 Banks each containing 32 Blocks of 128 KWords. By STMicroelectronics
M58PR256J 's PackagesM58PR256J 's pdf datasheet



M58PR256J Pinout will be updated soon..., now you can download the pdf datasheet to check the pinouts !
M58PR256J circuits will be updated soon..., now you can download the pdf datasheet to check the circuits!

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