32 Mbit (2mb X 16, Multiple Bank, Burst) 1.8v Supply Flash MemoryThe M58WR032E is a 32 Mbit (2Mbit x16) non-vol-
atile Flash memory that may be erased electrically
at block level and programmed in-system on a
Word-by-Word basis using a 1.65V to 2.2V VDD
supply for the circuitry and a 1.65V to 3.3V VDDQ
supply for the Input/Output pins. An optional 12V
VPP power supply is provided to speed up custom-
er programming.
The device features an asymmetrical block archi-
tecture. M58WR032E has an array of 71 blocks,
and is divided into 4 Mbit banks. There are 7 banks
each containing 8 main blocks of 32 KWords, and
one parameter bank containing 8 parameter
blocks of 4 KWords and 7 main blocks of 32
KWords. The Multiple Bank Architecture allows
Dual Operations, while programming or erasing in
one bank, Read operations are possible in other
banks. Only one bank at a time is allowed to be in
Program or Erase mode. It is possible to perform
burst reads that cross bank boundaries. The bank
architecture is summarized in Table 2., and the
memory maps are shown in Figure 4. The Param-
eter Blocks are located at the top of the memory
address space for the M58WR032ET and at the
bottom for the M58WR032EB. By STMicroelectronics
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M58WR032ET Pb-Free | M58WR032ET Cross Reference | M58WR032ET Schematic | M58WR032ET Distributor |
M58WR032ET Application Notes | M58WR032ET RoHS | M58WR032ET Circuits | M58WR032ET footprint |