32 Mbit (2mb X 16, Multiple Bank, Burst) 1.8v Supply Flash Memory

The M58WR032FT M58WR032FB is a 32 Mbit (2 Mbit x16) non-volatile Flash memory that may be erased electrically at block level and programmed in-sys- tem on a Word-by-Word basis using a 1.7V to 2V VDD supply for the circuitry and a 1.7V to 2.24V VDDQ supply for the Input/Output pins. An optional 12V VPP power supply is provided to speed up customer programming. The VPP pin CAN also be used as a control pin to provide absolute protection against program or erase. The device features an asymmetrical block archi- tecture. M58WR032FT M58WR032FB has an array of 71 blocks, and is divided into 4 Mbit banks. There are 7 banks each containing 8 main blocks of 32 KWords, and one parameter bank containing 8 pa- rameter blocks of 4 KWords and 7 main blocks of 32 KWords. The Multiple Bank Architecture allows Dual Operations, while programming or erasing in one bank, Read operations are possible in other banks. Only one bank at a time is allowed to be in Program or Erase mode. It is possible to perform burst reads that cross bank boundaries. The bank architecture is summarized in Table 2., and the memory maps are shown in Figure 4. The Param- eter Blocks are located at the top of the memory address space for the M58WR032FT and at the bottom for the M58WR032FB. By STMicroelectronics
M58WR032FT 's PackagesM58WR032FT 's pdf datasheet

M58WR032FT Pinout, Pinouts
M58WR032FT pinout,Pin out
This is one package pinout of M58WR032FT,If you need more pinouts please download M58WR032FT's pdf datasheet.

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