32 Mbit 2mb X16, Dual Bank, Page Low Voltage Flash Memory

The M59DR032 is a 32 Mbit non-volatile Flash memory that may be erased electrically at block level and programmed in-system on a Word-by- Word basis using a 1.65V to 2.2V VDD supply for the circuitry. For Program and Erase operations the necessary high voltages are generated inter- nally. The device supports asynchronous page mode from all the blocks of the memory array. The array matrix organization allows each block to be erased and reprogrammed without affecting other blocks. All blocks are protected against pro- gramming and erase at Power Up. Blocks CAN be unprotected to make changes in the application and then reprotected. Instructions for Read/Reset, Auto Select, Write Configuration Register Programming, Block Erase, Bank Erase, Erase Suspend, Erase Re- sume, Block Protect, Block Unprotect, Block Lock- ing, CFI Query, are written to the memory through a Command Interface using standard micropro- cessor write Timings The device is offered in TSOP48 (12 x 20 mm) and in FBGA48 0.75 mm ball pitch packages. When shipped all bits of the M59DR032 device are at the logical level 1. By STMicroelectronics
M59DR032B 's PackagesM59DR032B 's pdf datasheet
M59DR032A




M59DR032B Pinout, Pinouts
M59DR032B pinout,Pin out
This is one package pinout of M59DR032B,If you need more pinouts please download M59DR032B's pdf datasheet.

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