16mcdram:16m(1m-word By 16-bit) Cached Dram With 16k (1024-word By 16-bit) Sram Electric Semiconductor

The M5M4V16169DTP/RT is a 16M-bit Cached DRAM which integrates input Registers a 1,048,576-word by 16-bit dynamic memory array and a 1024- word by 16-bit static RAM array as a Cache memory (block size 8x16) onto a single monolithic circuit. The block data transfer between the DRAM and the data transfer Buffers (RB1/RB2/WB1/WB2) is performed in one instruction cycle, a fundamental advantage over a conventional DRAM SRAM cache. The RAM is fabricated with a high performance CMOS process, and is ideal for large-capacity memory systems where high speed, low power dissipation, and low cost are essential. The use of quadruple-layer polysilicon process combined with silicide and double layer aluminum wiring technology, a single-transistor dynamic storage stacked capacitor cell, and a six-transistor static storage cache cell provide high circuit density at reduced costs. By Mitsumi Electronics, Corp.
M5M4V16169DRT-10 's PackagesM5M4V16169DRT-10 's pdf datasheet
M5M4V16169TP-RT-15
M5M4V16169TP-RT-8
M5M4V16169TP-RT-7
M5M4V16169TP-RT-10




M5M4V16169DRT-10 Pinout, Pinouts
M5M4V16169DRT-10 pinout,Pin out
This is one package pinout of M5M4V16169DRT-10,If you need more pinouts please download M5M4V16169DRT-10's pdf datasheet.

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M5M4V16169DRT-10 Application Notes M5M4V16169DRT-10 RoHS M5M4V16169DRT-10 Circuits M5M4V16169DRT-10 footprint
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