16,777,216-bit (1,048,576 -word By 16-bit / 2,097,152-word By 8-bit) Cmos 3.3v-only Flash Memory Electric SemiconductorThe MITSUBISHI M6MGB/T160S4BVP is a Stacked Multi
Chip Package (S-MCP) that contents 16M-bits Flash memory
and 4M-bits Static RAM in a 48-pin TSOP (TYPE-I).
16M-bits Flash memory is a 2097152 bytes /1048576 words,
3.3V-only, and high performance non-volatile memory
fabricated by CMOS technology for the peripheral circuit
and DINOR(DIvided bit-line NOR) architecture for the
memory cell.
4M-bits SRAM is a 524288bytes / 262144words
unsynchronous SRAM fabricated by silicon-gate CMOS
technology.
M6MGB/T160S4BVP is suitable for the application of the
mobile-communication-system to reduce both the mount
space and weight . By Mitsumi Electronics, Corp.
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M6MGB160S4BVP Pb-Free | M6MGB160S4BVP Cross Reference | M6MGB160S4BVP Schematic | M6MGB160S4BVP Distributor |
M6MGB160S4BVP Application Notes | M6MGB160S4BVP RoHS | M6MGB160S4BVP Circuits | M6MGB160S4BVP footprint |