134,217,728-bit (8,388,608-word By 16-bit) Cmos Flash Memory & 67,108,864-bit (4,194,304-word By 16-bit) Cmos Mobile Ram - Renesas Technology Corp

The M6MGD13TW66CWG-P is a Stacked Chip Scale Package (S-CSP) that contents 128M-bit Flash memory and 64M-bit Mobile RAM in a 72-pin Stacked CSP with leaded solder ball. 128M-bit Flash memory is a 8,388,608 words, single power supply and high performance non-volatile memory fabricated by CMOS technology for the peripheral circuit and DINOR IV (Divided bit-line NOR IV) architecture for the memory cell. All memory blocks are locked and CAN not be programmed or erased, when F-WP# is Low. Using Software Lock Release function, program or erase operation CAN be executed. 64M-bit Mobile RAM is a 4,194,304 words high density RAM fabricated by CMOS technology for the peripheral circuit and DRAM cell for the memory array. The Interface is compatible to an asynchronous SRAM The cells are automatically refreshed and the refresh control is not required for system. The device also has the partial block refresh scheme and the power down mode by writing the command. By Renesas Technology
M6MGD13TW66CWG-P 's PackagesM6MGD13TW66CWG-P 's pdf datasheet

M6MGD13TW66CWG-P Pinout, Pinouts
M6MGD13TW66CWG-P pinout,Pin out
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