Radiation Hard 512x9 Bit FIFO

The MA7001 512 x 9 FIFO is manufactured using Dynex Semiconductor's CMOS-SOS high performance, radiation hard, 3m technology. The Dynex Semiconductor Silicon-on-Sapphire process provides significant advantages over bulk silicon substrate technologies In addition to very good total dose hardness and neutron hardness >1015 n/cm2 , the Dynex Semiconductor technology provides very high transient gamma and single event upset performance without compromising speed of operation The Sapphire substrate also eliminates latch-up giving greater flexibility of use in electrically severe environments. The MA7001 implements a First-ln First-Out algorithm that reads and writes data on a first-in first-out basis. The dual-port static RAM memory is organised as 512 words of 9 bits (8 bit By Dynex Semiconductor
MA7001 's PackagesMA7001 's pdf datasheet



MA7001 Pinout, Pinouts
MA7001 pinout,Pin out
This is one package pinout of MA7001,If you need more pinouts please download MA7001's pdf datasheet.

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