MAX2601, MAX2602 3.6V, 1W RF Power Transistors For 900MHz Applications

The MAX2601 MAX2602 are RF Power Transistors optimized for use in portable cellular and Wireless equipment that operates from three NiCd/NiMH cells or one Li-Ioncell. These Transistors deliver 1W of RF Power from a 3.6V supply with efficiency of 58% when biased for constant-envelope applications (e.g., FM or FSK). For NADC (IS-54) operation, they deliver 29dBm with -28dBc ACPR from a 4.8V supply.
The MAX2601 is a high-performance silicon bipolar RF Power Transistor The MAX2602 includes a high-performance silicon bipolar RF Power Transistor and a biasing Diode that matches the thermal and process characteristics of the Power Transistor This Diode is used to create a bias network that accurately controls the power transistor's collector current as the temperature changes.
The MAX2601 MAX2602 CAN be used as the final stage in a Discrete or module power Amplifier Silicon bipolar technology eliminates the need for voltage inverters and sequencing circuitry, as required by GaAsFET power Amplifiers Furthermore, a drain Switch is not required to turn off the MAX2601 MAX2602. This increases operating time in two ways: it allows lower system end-of-life battery voltage, and it eliminates the wasted power from a drain-switch device.
The MAX2601 MAX2602 are available in thermally enhanced, 8-pin SO packages, which are screened to the extended temperature range (-40C to +85C). The MAX2602 is also available in die form.
By Maxim Integrated Products