MAX2601, MAX2602 3.6V, 1W RF Power Transistors For 900MHz Applications

The MAX2601 MAX2602 are RF Power Transistors optimized for use in portable cellular and Wireless equipment that operates from three NiCd/NiMH cells or one Li-Ioncell. These Transistors deliver 1W of RF Power from a 3.6V supply with efficiency of 58% when biased for constant-envelope applications (e.g., FM or FSK). For NADC (IS-54) operation, they deliver 29dBm with -28dBc ACPR from a 4.8V supply.
The MAX2601 is a high-performance silicon bipolar RF Power Transistor The MAX2602 includes a high-performance silicon bipolar RF Power Transistor and a biasing Diode that matches the thermal and process characteristics of the Power Transistor This Diode is used to create a bias network that accurately controls the power transistor's collector current as the temperature changes.
The MAX2601 MAX2602 CAN be used as the final stage in a Discrete or module power Amplifier Silicon bipolar technology eliminates the need for voltage inverters and sequencing circuitry, as required by GaAsFET power Amplifiers Furthermore, a drain Switch is not required to turn off the MAX2601 MAX2602. This increases operating time in two ways: it allows lower system end-of-life battery voltage, and it eliminates the wasted power from a drain-switch device.
The MAX2601 MAX2602 are available in thermally enhanced, 8-pin SO packages, which are screened to the extended temperature range (-40C to +85C). The MAX2602 is also available in die form.
By Maxim Integrated Products
MAX2601 's PackagesMAX2601 's pdf datasheet



MAX2601 Pinout, Pinouts
MAX2601 pinout,Pin out
This is one package pinout of MAX2601,If you need more pinouts please download MAX2601's pdf datasheet.

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