Memory FRAM CMOS 256 K (32 K ?? 8) Bit

The MB85R256H is an FRAM (Ferroelectric Random Access Memory) chip in a configuration of 32,768 words x 8 bits, using the ferroelectric process and silicon Gate CMOS process technologies for forming the nonvolatile memory cells. Unlike SRAM MB85R256H is able to retain data without back-up battery. The memory cells used for the MB85R256H has improved at least 1010 times of read/write access per bit, significantly outperforming Flash memory and E2PROM in durability. The MB85R256H uses a pseudo - SRAM Interface compatible with conventional asynchronous SRAM By Fujitsu Microelectronics, Inc.
MB85R256H 's PackagesMB85R256H 's pdf datasheet

MB85R256H Pinout, Pinouts
MB85R256H pinout,Pin out
This is one package pinout of MB85R256H,If you need more pinouts please download MB85R256H's pdf datasheet.

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