Insulated Gate Bipolar Transistor , Inc

This Insulated Gate Bipolar Transistor (IGBT) MGP4N60E uses an advanced termination scheme to provide an enhanced and reliable high voltageblocking capability. Its new 600 V IGBT technology is specifically suited for applications requiring both a high tempera- ture short circuit capability and a low VCE(on). It also provides fast switching characteristics and results in efficient operation at high frequencies. This new Eseries introduces an Energyefficient, ESD protected, and short circuit rugged device. By Freescale Semiconductor, Inc
MGP4N60E 's PackagesMGP4N60E 's pdf datasheet



MGP4N60E Pinout, Pinouts
MGP4N60E pinout,Pin out
This is one package pinout of MGP4N60E,If you need more pinouts please download MGP4N60E's pdf datasheet.

MGP4N60E Application circuits
MGP4N60E circuits
This is one application circuit of MGP4N60E,If you need more circuits,please download MGP4N60E's pdf datasheet.


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