Insulated Gate Bipolar Transistor With Anti-parallel Diode , IncThis Insulated Gate Bipolar Transistor (IGBT) MGY20N120D is copackaged
with a soft recovery Ultrafast Rectifier and uses an advanced
termination scheme to provide an enhanced and reliable high
voltageblocking capability. Short circuit rated IGBTs are specifi-
cally suited for applications requiring a guaranteed short circuit
withstand time such as Motor Control Drives. Fast switching
characteristics result in efficient operation at high frequencies.
Copackaged IGBTs save space, reduce assembly time and cost. By Freescale Semiconductor, Inc
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MGY20N120D Pb-Free | MGY20N120D Cross Reference | MGY20N120D Schematic | MGY20N120D Distributor |
MGY20N120D Application Notes | MGY20N120D RoHS | MGY20N120D Circuits | MGY20N120D footprint |