Dual Tmos Mosfet 3.3 Amperes 60 Volts , Inc

TMOS V is a new technology designed to achieve an onresis- tance area product about onehalf that of standard MOSFETs MMDF2N06V This new technology more than doubles the present cell density of our 50 and 60 volt TMOS devices. Just as with our TMOS EFET designs, TMOS V is designed to withstand high energy in the avalanche and commutation modes. Designed for low voltage, high speed switching applications in power supplies, converters and power Motor Controls these devices are particularly well suited for bridge circuits where Diode speed and commutating safe operating areas are critical and offer additional safety margin against unexpected voltage transients. By Freescale Semiconductor, Inc
MMDF2N06V 's PackagesMMDF2N06V 's pdf datasheet
MMDF2N06V1
MMDF2N06V2




MMDF2N06V Pinout, Pinouts
MMDF2N06V pinout,Pin out
This is one package pinout of MMDF2N06V,If you need more pinouts please download MMDF2N06V's pdf datasheet.

MMDF2N06V Application circuits
MMDF2N06V circuits
This is one application circuit of MMDF2N06V,If you need more circuits,please download MMDF2N06V's pdf datasheet.


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