Tmos Power Fet 2.0 Amperes 250 Volts , IncThis advanced high voltage TMOS EFET MMFT2N25E is designed to
withstand high energy in the avalanche mode and Switch efficiently.
This new high energy device also offers a draintosource Diode
with fast recovery time. Designed for high voltage, high speed
switching applications such as power supplies, PWM motor
controls and other inductive loads, the avalanche energy capability
is specified to eliminate the guesswork in designs where inductive
loads are switched and offer additional safety margin against
unexpected voltage transients. By Freescale Semiconductor, Inc
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MMFT2N25E Pb-Free | MMFT2N25E Cross Reference | MMFT2N25E Schematic | MMFT2N25E Distributor |
MMFT2N25E Application Notes | MMFT2N25E RoHS | MMFT2N25E Circuits | MMFT2N25E footprint |