• Product pinout
  • Description
  • BLA1011-10,BLA1011-10 Avionics LDMOS Transistor
  • BLA1011-10 Avionics LDMOS transistor,Silicon N-channel enhancement mode lateral D-MOS transistor encapsulated in a 2-lead flange package (SOT467C) with a ceramic cap. The common source is connected to the flange.
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  • BLA1011-2,BLA1011-2 Avionics LDMOS Transistor
  • BLA1011-2 Avionics LDMOS transistor,Silicon N-channel enhancement mode lateral D-MOS transistor encapsulated in a 2-lead flangeless package (SOT538A) with a ceramic cap. The common source is connected to the mounting base.
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  • BLF1046,BLF1046 UHF Power LDMOS Transistor
  • BLF1046 UHF power LDMOS transistor,Silicon N-channel enhancement mode lateral D-MOS transistor encapsulated in a 2-lead flange package (SOT467C) with a ceramic cap. The common source is connected to the mounting flange.
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  • BLF175,BLF175 HF-VHF Power MOS Transistor
  • BLF175 HF-VHF power MOS transistor Silicon N-channel enhancement mode vertical D-MOS transistor designed for large signal amplifier applications in the HF/VHF frequency range. The transistor has a 4-lead, SOT123A flange package, with a ceramic cap. All ...
  • BLF2043F,BLF2043F UHF Power LDMOS Transistor
  • BLF2043F UHF power LDMOS transistor,Silicon N-channel enhancement mode lateral D-MOS transistor encapsulated in a 2-lead flange package (SOT467C) with a ceramic cap. The common source is connected to the mounting flange.
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  • BLF242,BLF242 HF-VHF Power MOS Transistor
  • BLF242 HF-VHF power MOS transistor Silicon N-channel enhancement mode vertical D-MOS transistor designed for professional transmitter applications in the HF/VHF frequency range. The transistor is encapsulated in a 4-lead, SOT123A flange package, with a ...
  • BLF244,BLF244 VHF Power MOS Transistor
  • BLF244 VHF power MOS transistor Silicon N-channel enhancement mode vertical D-MOS transistor designed for large signal amplifier applications in the VHF frequency range. The transistor is encapsulated in a 4-lead SOT123A flange package, with a ceramic ...
  • BLF245B,BLF245B VHF Push-pull Power MOS Transistor
  • BLF245B VHF push-pull power MOS transistor Dual push-pull silicon N-channel enhancement mode vertical D-MOS transistor designed for large signal amplifier applications in the VHF frequency range. The transistor is encapsulated in a 4-lead, SOT279A ...
  • BLF245,BLF245 VHF Power MOS Transistor
  • Silicon N-channel enhancement mode vertical D-MOS transistor designed for large signal amplifier applications in the VHF frequency range. The transistor is encapsulated in a 4-lead SOT123A flange package, with a ceramic cap. All leads are isolated from ...
  • BLF246B,BLF246B VHF Push-pull Power MOS Transistor
  • BLF246B VHF push-pull power MOS transistor Dual silicon N-channel enhancement mode vertical D-MOS push-pull transistor encapsulated in an 8-lead SOT161A balanced flange package with a ceramic cap. All leads are isolated from the flange.
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  • BLF246,BLF246 VHF Power MOS Transistor
  • BLF246 VHF power MOS transistor Silicon N-channel enhancement mode vertical D-MOS transistor encapsulated in a 4-lead, SOT121B flange package with a ceramic cap. All leads are isolated from the flange. A marking code, showing gate-source voltage (VGS) ...
  • BLF248,BLF248 VHF Push-pull Power MOS Transistor
  • BLF248 VHF push-pull power MOS transistor Dual push-pull silicon N-channel enhancement mode vertical D-MOS transistor, designed for large signal amplifier applications in the VHF frequency range. The transistor is encapsulated in a 4-lead SOT262 A1 ...
  • BLF278,BLF278 VHF Push-pull Power MOS Transistor
  • BLF278 VHF push-pull power MOS transistor Dual push-pull silicon N-channel enhancement mode vertical D-MOS transistor encapsulated in a 4-lead, SOT262A1 balanced flange package with two ceramic caps. The mounting flange provides the common ...
  • BLF346,BLF346 VHF Power MOS Transistor
  • BLF346 VHF power MOS transistor Silicon N-channel enhancement mode vertical D-MOS transistor encapsulated in a 6-lead, SOT119A flange package, with a ceramic cap. All leads are isolated from the flange. A marking code, showing gate-source voltage (VGS) ...
  • BLF368,BLF368 VHF Push-pull Power MOS Transistor
  • BLF368 VHF push-pull power MOS transistor Dual push-pull silicon N-channel enhancement mode vertical D-MOS transistor, designed for broadcast transmitter applications in the VHF frequency range. The transistor is encapsulated in a 4-lead SOT262A1 ...
  • BLF3G21-30,BLF3G21-30 UHF Power LDMOS Transistor
  • BLF3G21-30 UHF power LDMOS transistor,30 W LDMOS power transistor for base station applications at frequencies from HF to 2200 MHz. CAUTION This device is sensitive to ElectroStatic Discharge (ESD). Therefore care should be taken during transport and ...
  • BLF3G22-30,BLF3G22-30 UHF Power LDMOS Transistor
  • BLF3G22-30 UHF power LDMOS transistor,30 W LDMOS power transistor for base station applications at frequencies from 2000 MHz to 2200 MHz CAUTION This device is sensitive to ElectroStatic Discharge (ESD). Therefore care should be taken during transport and ...
  • BLF4G10-160,BLF4G10-160 UHF Power LDMOS Transistor
  • BLF4G10-160 UHF power LDMOS transistor,160 W LDMOS power transistor for base station applications at frequencies from 800 MHz to 1000 MHz. CAUTION This device is sensitive to ElectroStatic Discharge (ESD). Therefore care should be taken during transport ...
  • BLF4G10LS-120,BLF4G10LS-120 UHF Power LDMOS Transistor
  • BLF4G10LS-120 UHF power LDMOS transistor,120 W LDMOS power transistor for base station applications at frequencies from 800 MHz to 1000 MHz.CAUTION This device is sensitive to ElectroStatic Discharge (ESD). Therefore care should be taken during transport and ...
  • BLF4G10LS-160,BLF4G10LS-160 UHF Power LDMOS Transistor
  • BLF4G10LS-160 UHF power LDMOS transistor,160 W LDMOS power transistor for base station applications at frequencies from 800 MHz to 1000 MHz. CAUTION This device is sensitive to ElectroStatic Discharge (ESD). Therefore care should be taken during transport ...
  • BLF4G20LS-110B,BLF4G20LS-110B UHF Power LDMOS Transistor
  • BLF4G20LS-110B UHF power LDMOS transistor,110 W LDMOS power transistor for base station applications at frequencies from 1800 MHz to 2000 MHz. This device is sensitive to ElectroStatic Discharge (ESD). Therefore care should be taken during transport and ...
  • BLF4G20LS-130,BLF4G20LS-130 UHF Power LDMOS Transistor
  • BLF4G20LS-130 UHF power LDMOS transistor,130 W LDMOS power transistor for base station applications at frequencies from 1800 MHz to 2000 MHz. CAUTION This device is sensitive to ElectroStatic Discharge (ESD). Therefore care should be taken during transport ...
  • BLF521,BLF521 UHF Power MOS Transistor
  • BLF521 UHF power MOS transistor Silicon N-channel enhancement mode vertical D-MOS transistor designed for communications transmitter applications in the UHF frequency range. The transistor is encapsulated in a 4-lead, SOT172D studless package, with a ...
  • BLF542,BLF542 UHF Power MOS Transistor
  • BLF542 UHF power MOS transistor N-channel enhancement mode vertical D-MOS power transistor encapsulated in a 6-lead, SOT171A flange package with a ceramic cap. All leads are isolated from the flange.
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  • BLF544,BLF544 UHF Power MOS Transistor
  • BLF544 UHF power MOS transistor N-channel enhancement mode vertical D-MOS power transistor encapsulated in a 6-lead, SOT171A flange package with a ceramic cap. All leads are isolated from the flange. A marking code showing gate-source voltage ...
  • BLF546,BLF546 UHF Push-pull Power MOS Transistor
  • BLF546 UHF push-pull power MOS transistor Silicon N-channel enhancement mode vertical D-MOS push-pull transistor designed for communications transmitter applications in the UHF frequency range. The transistor is encapsulated in a 4-lead, SOT268A ...
  • BLF548,BLF548 UHF Push-pull Power MOS Transistor
  • BLF548 UHF push-pull power MOS transistor Dual push-pull silicon N-channel enhancement mode vertical D-MOS transistor designed for communications transmitter applications in the UHF frequency range. The transistor is encapsulated in a 4-lead, SOT262A2 ...
  • BLF647,BLF647 UHF Power LDMOS Transistor
  • BLF647 UHF power LDMOS transistor,Silicon N-channel enhancement mode lateral D-MOS push-pull transistor in a SOT540A package with ceramic cap. The common source is connected to the mounting flange.
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  • BLF6G10S-45,BLF6G10S-45 UHF Power LDMOS Transistor
  • BLF6G10S-45 UHF power LDMOS transistor,45 W LDMOS power transistor for base station applications at frequencies from 800 MHz to 1000 MHz. CAUTION This device is sensitive to ElectroStatic Discharge (ESD). Therefore care should be taken during transport and ...
  • BLF6G20-45,BLF6G20-45 UHF Power LDMOS Transistor
  • BLF6G20-45 UHF power LDMOS transistor,45 W LDMOS power transistor for base station applications at frequencies from 1800 MHz to 2000 MHz. CAUTION This device is sensitive to ElectroStatic Discharge (ESD). Therefore care should be taken during transport and ...
  • BLF6G22-180P,BLF6G22-180P UHF Power LDMOS Transistor
  • BLF6G22-180P UHF power LDMOS transistor,180 W LDMOS power transistor for base station applications at frequencies from 2000 MHz to 2200 MHz. CAUTION This device is sensitive to ElectroStatic Discharge (ESD). Therefore care should be taken during transport ...
  • BLF6G22-45,BLF6G22-45 UHF Power LDMOS Transistor
  • BLF6G22-45 UHF power LDMOS transistor,45 W LDMOS power transistor for base station applications at frequencies from 2000 MHz to 2200 MHz. CAUTION: This device is sensitive to ElectroStatic Discharge (ESD). Therefore care should be taken during transport ...
  • BLF861A,BLF861A UHF Power LDMOS Transistor
  • BLF861A UHF power LDMOS transistor,Silicon N-channel enhancement mode lateral D-MOS push-pull transistor in a SOT540A package with ceramic cap. The common source is connected to the mounting flange.
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  • BLF872,BLF872 UHF Power LDMOS Transistor
  • BLF872 UHF power LDMOS transistor,A 300 W LDMOS RF power transistor for broadcast transmitter applications and industrial applications. The transistor can deliver 250 W broadband over the full UHF band from 470 MHz to 860 MHz. The excellent ruggedness and ...
  • BLL1214-250,BLL1214-250 L-band Radar LDMOS Transistor
  • BLL1214-250 L-band radar LDMOS transistor,Silicon N-channel enhancement mode lateral D-MOS transistor encapsulated in a 2-lead flange package (SOT502A) with a ceramic cap. The common source is connected to the flange.
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  • BLS2933-100,BLS2933-100 Microwave Power LDMOS Transistor
  • BLS2933-100 Microwave power LDMOS transistor,100 WLDMOS power transistor (at a supply voltage of 32 V) for S-band radar applications in the 2.9 GHz to 3.3 GHz frequency range.CAUTION This device is sensitive to ElectroStatic Discharge (ESD). Therefore care ...
  • BSH105,BSH105 N-channel Enhancement Mode MOS Transistor
  • BSH105 N-channel enhancement mode MOS transistor N-channel, enhancement mode, logic level, field-effect power transistor. This device has very low threshold voltage and extremely fast switching making it ideal for battery powered applications and high speed ...
  • BSH201,BSH201 P-channel Enhancement Mode MOS Transistor
  • BSH201 P-channel enhancement mode MOS transistor P-channel, enhancement mode, logic level, field-effect power transistor. This device has low threshold voltage and extremely fast switching making it ideal for battery powered applications and high speed digital ...
  • BSH202,BSH202 P-channel Enhancement Mode MOS Transistor
  • BSH202 P-channel enhancement mode MOS transistor P-channel, enhancement mode, logic level, field-effect power transistor. This device has low threshold voltage and extremely fast switching making it ideal for battery powered applications and high speed digital ...
  • BSH203,BSH203 P-channel Enhancement Mode MOS Transistor
  • BSH203 P-channel enhancement mode MOS transistor P-channel, enhancement mode, logic level, field-effect power transistor. This device has low threshold voltage and extremely fast switching making it ideal for battery powered applications and high speed digital ...
  • BSH205,BSH205 P-channel Enhancement Mode MOS Transistor
  • BSH205 P-channel enhancement mode MOS transistor P-channel, enhancement mode, logic level, field-effect power transistor. This device has low threshold voltage and extremely fast switching making it ideal for battery powered applications and high speed digital ...
  • BSH207,BSH207 P-channel Enhancement Mode MOS Transistor
  • BSH207 P-channel enhancement mode MOS transistor P-channel, enhancement mode, logic level, field-effect power transistor. This device has low threshold voltage and extremely fast switching making it ideal for battery powered applications and high speed digital ...