• Product pinout
  • Description
  • VNB28N04,OMNIFET FULLY AUTOPROTECTED POWER MOSFET
  • The VNP28N04FI, VNB28N04 and VNV28N04 are monolithic devices made using STMicroelectronics VIPower M0 Technology, intended for replacement of standard power MOSFETS in DC to 50 KHz applications. Built-in thermal shut-down, linear current limitation ...
  • VNB35N07,OMNIFET FULLY AUTOPROTECTED POWER MOSFET
  • The VNP35N07FI, VNB35N07 and VNV35N07 are monolithic devices made using STMicroelectronics VIPower M0 Technology, intended for replacement of standard power MOSFETS in DC to 50 KHz applications. Built-in thermal shut-down, linear current limitation ...
  • VNB49N04,ÔÇťOMNIFET? FULLY AUTOPROTECTED POWER MOSFET
  • The VNP49N04FI, VNB49N04, VNV49N04 are monolithic devices designed in STMicroelectronics VIPower M0 Technology, intended for replacement of standard Power MOSFETS from DC up to 50KHz applications. Built-in thermal shutdown, linear current limitation and ...
  • VND10N06,OMNIFET FULLY AUTOPROTECTED POWER MOSFET
  • The VND10N06, VND10N06-1, VNP10N06FI and VNK10N06FM are monolithic devices made using SGS-THOMSON Vertical Intelligent Power M0 Technology, intended for replacement of standard power MOSFETS in DC to 50 KHz applications. Built-in thermal shut-down, ...
  • VND1NV04,OMNIFET II: FULLY AUTOPROTECTED POWER MOSFET
  • The VND1NV04, VNN1NV04, VNS1NV04 are monolithic devices designed in STMicroelectronics VIPower M0-3 Technology, intended for replacement of standard Power MOSFETS from DC up to 50KHz applications. Built in thermal shutdown, linear current limitation and ...
  • VND3NV04,OMNIFET II: FULLY AUTOPROTECTED POWER MOSFET
  • The VNN3NV04, VNS3NV04, VND3NV04 VND3NV04-1, are monolithic devices designed in STMicroelectronics VIPower M0-3 Technology, intended for replacement of standard Power MOSFETS from DC up to 50KHz applications. Built in thermal shutdown, linear current ...
  • VND5N07,OMNIFET FULLY AUTOPROTECTED POWER MOSFET
  • The VND5N07, VND5N07-1, VNP5N07FI and VNK5N07FM are monolithic devices made using STMicroelectronics VIPower M0 Technology, intended for replacement of standard power MOSFETS in DC to 50 KHz applications. Built-in thermal shut-down, linear current ...
  • VND7N04,OMNIFET FULLY AUTOPROTECTED POWER MOSFET
  • The VND7N04, VND7N04-1, VNP7N04FI and VNK7N04FM are monolithic devices made using STMicroeletronics VIPower M0 Technology, intended for replacement of standard power MOSFETS in DC to 50 KHz applications. Built-in thermal shut-down, linear current ...
  • VND7NV04,OMNIFET II: FULLY AUTOPROTECTED POWER MOSFET
  • The VNN7NV04, VNS7NV04, VND7NV04 VND7NV04-1, are monolithic devices designed in STMicroelectronics VIPower M0-3 Technology, intended for replacement of standard Power MOSFETS from DC up to 50KHz applications. Built in thermal shutdown, linear current ...
  • VNP10N06,OMNIFET FULLY AUTOPROTECTED POWER MOSFET
  • The VNP10N06 is a monolithic device made using STMicroelectronics VIPower Technology, intended for replacement of standard power MOSFETS in DC to 50 KHz applications. Built-in thermal shut-down, linear current limi- tation and overvoltage ...
  • VNP10N07,OMNIFET FULLY AUTOPROTECTED POWER MOSFET
  • The VNP10N07 is a monolithic device made using STMicroelectronics VIPower Technology, intended for replacement of standard power MOSFETS in DC to 50 KHz applications. Built-in thermal shut-down, linear current limi- ...
  • VNP14N04,OMNIFET FULLY AUTOPROTECTED POWER MOSFET
  • The VNP14N04 is a monolithic device made using STMicroelectronics VIPower Technology, Technology, intended for replacement of standard power MOSFETS in DC to 50 KHz applications. Built-in thermal shut-down, linear ...
  • VNS3NV04D,OMNIFET II: FULLY AUTOPROTECTED POWER MOSFET
  • The VNS3NV04D is a device formed by two monolithic OMNIFET II chips housed in a standard SO-8 package. The OMNIFET II are designed in STMicroelectronics VIPower M0-3 Technology: they are intended for replacement of standard Power MOSFETS from DC up to ...
  • VNS3NV04D-E,OMNIFET II Fully Autoprotected Power MOSFET
  • The VNS3NV04D-E is a device formed by two monolithic OMNIFET II chips housed in a standard SO-8 package. The OMNIFET II are designed in STMicroelectronics VIPower M0-3 Technology: they are intended for replacement of standard Power MOSFETs from DC up ...
  • APTM120DA68T1G,Boost Chopper - Mosfet
  • Boost Chopper - Mosfet APTM120DA68T1G Application , AC and DC motor control , Switched Mode Power Supplies , Power Factor Correction Features , Power MOS 8, MOSFETs - Low RDSon - Low input and Miller capacitance - Low gate ...