Rf Power Field Effect Transistors N-channel Enhancement-mode Lateral Mosfets

Designed for GSM and GSM EDGE MRF6S18060MR1 MRF6S18060MBR1 base station applications with frequencies from 1800 to 2000 MHz. Suitable for TDMA, CDMA and multicarrier Amplifier applications. By Freescale Semiconductor, Inc
MRD6S18060MR1 's PackagesMRD6S18060MR1 's pdf datasheet



MRD6S18060MR1 Pinout, Pinouts
MRD6S18060MR1 pinout,Pin out
This is one package pinout of MRD6S18060MR1,If you need more pinouts please download MRD6S18060MR1's pdf datasheet.

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