Gallium Arsenide PHEMT RF Power Field Effect Transistor

Designed for WLL/MMDS or UMTS driver MRFG35010 applications with frequencies from 1.8 to 3.6 GHz. Device is unmatched and is suitable for use in Class AB or Class A linear base station applications. By Freescale Semiconductor, Inc
MRFG35010 's PackagesMRFG35010 's pdf datasheet
MRFG35010 pdf datasheet download


MRFG35010 Pinout, Pinouts
MRFG35010 pinout,Pin out
This is one package pinout of MRFG35010,If you need more pinouts please download MRFG35010's pdf datasheet.

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