900 MHz GSM CELLULAR INTEGRATED POWER AMPLIFIER GaAs MONOLITHIC INTEGRATED CIRCUIT900 MHz GSM CELLULAR INTEGRATED POWER Amplifier MRFIC0917 GaAs MONOLITHIC INTEGRATED CIRCUIT,This integrated circuit is intended for GSM class IV handsets. The device is
specified for 2.5 Watts output power and 43% minimum power added
efficiency under GSM signal conditions at 3.6 Volt supply voltage. To achieve
this superior performance, Motorolas planar GaAs MESFET process is
employed. The device is packaged in the PFP16 Power Flat Pack package
which gives excellent thermal performance through a solderable backside
contact. By Freescale Semiconductor, Inc
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| MRFIC0917 Pb-Free | MRFIC0917 Cross Reference | MRFIC0917 Schematic | MRFIC0917 Distributor |
| MRFIC0917 Application Notes | MRFIC0917 RoHS | MRFIC0917 Circuits | MRFIC0917 footprint |
