Synchronous Dram Module Technology

The MT8LSDT13264A(I) and MT16LSDT6464A I) are high-speed CMOS, dynamic random-access, 256MB and 512MB memory modules organized in x64 configurations. These modules use internally config- ured quad-bank SDRAMs with a synchronous inter- face (all signals are registered on the positive edge of the Clock signals CK0-CK3). Read and write accesses to the SDRAM modules are burst oriented; accesses start at a selected location and continue for a programmed number of locations in a programmed sequence. Accesses begin with the regis- tration of an ACTIVE command, which is then fol- lowed by a READ or WRITE command. The address bits registered coincident with the ACTIVE command are used to select the device bank and row to be accessed (BA0, BA1 select the device bank; A0A12 select the device row). The address bits registered coincident with the READ or WRITE command are used to select the starting column location for the burst access. By Micron Semiconductor Products
MT16LSDT6464A 's PackagesMT16LSDT6464A 's pdf datasheet



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MT16LSDT6464A circuits will be updated soon..., now you can download the pdf datasheet to check the circuits!

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