FLASH MEMORY

The MT28F002B3 (x8) and MT28F200B3 (x16/x8) are nonvolatile, electrically block-erasable (flash), pro- grammable, read-only Memories containing 2,097,152 bits organized as 131,072 words (16 bits) or 262,144 bytes (8 bits). Writing or erasing the device is done with either a 3.3V or 5V VPP voltage, while all operations are performed with a 3.3V VCC. Due to process technology advances, 5V VPP is optimal for application and produc- tion programming. For backward compatibility with SmartVoltage technology, 12V VPP is supported for a maximum of 100 cycles and may be connected for up to 100 cumulative hours. These devices are fabricated with Microns advanced CMOS floating-gate process. The MT28F002B3 and MT28F200B3 are organized into five separately erasable blocks. To ensure that critical firmware is protected from accidental erasure or overwrite, the devices feature a hardware-protected By Micron Semiconductor Products
MT28F002B3 's PackagesMT28F002B3 's pdf datasheet
MT28F200B3
MT28F200B3WG-9B
MT28F200B3WG-9T
MT28F200B3WG-10BET
MT28F200B3WG-10TET
MT28F200B3SG-9B
MT28F200B3SG-9T
MT28F200B3SG-10BET
MT28F200B3SG-10TET
MT28F002B3VG-9B
MT28F002B3VG-9T
MT28F002B3VG-10BET
MT28F002B3VG-10TET




MT28F002B3 Pinout, Pinouts
MT28F002B3 pinout,Pin out
This is one package pinout of MT28F002B3,If you need more pinouts please download MT28F002B3's pdf datasheet.

MT28F002B3 circuits will be updated soon..., now you can download the pdf datasheet to check the circuits!

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MT28F002B3 Application Notes MT28F002B3 RoHS MT28F002B3 Circuits MT28F002B3 footprint
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