Dram Technology

The 16 Meg x 4 DRAMs MT4LC16M4A7 MT4LC16M4T8 are high-speed CMOS, dynamic random-access memory devices contain-ing 67,108,864 bits organized in a x4 configuration. The MT4LC16M4A7 and MT4LC16M4T8 are functionally organized as 16,777,216 locations containing four bits each. The 16,777,216 memory locations are arranged in 8,192 rows by 2,048 columns for the MT4LC16M4A7 or 4,096 rows by 4,096 columns for the MT4LC16M4T8. During READ or WRITE cycles, each location is uniquely addressed via the address bits. First, the row address is latched by the RAS# signal, then the column address by CAS#. Both devices provide FAST-PAGE-MODE opera- tion, allowing for fast successive data operations (READ, WRITE, or READ-MODIFY-WRITE) within a given row. The MT4LC16M4A7 and MT4LC16M4T8 must be refreshed periodically in order to retain stored data. By Micron Semiconductor Products
MT4LC16M4A7 's PackagesMT4LC16M4A7 's pdf datasheet

MT4LC16M4A7 Pinout, Pinouts
MT4LC16M4A7 pinout,Pin out
This is one package pinout of MT4LC16M4A7,If you need more pinouts please download MT4LC16M4A7's pdf datasheet.

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